RSH110N03TB1
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RSH110N03TB1 datasheet
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МаркировкаRSH110N03TB1
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ПроизводительRohm
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ОписаниеRohm RSH110N03TB1 Continuous Drain Current: 11 A Current - Continuous Drain (id) @ 25?° C: 11A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 8 S Gate Charge (qg) @ Vgs: 17nC @ 5V Input Capacitance (ciss) @ Vds: 1300pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOP Power - Max: 2W Power Dissipation: 2 W Rds On (max) @ Id, Vgs: 10.7 mOhm @ 11A, 10V Resistance Drain-source Rds (on): 11.2 mOhms Series: - Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.5V @ 1mA Other Names: RSH110N03TB1TR
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Количество страниц4 шт.
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Форматы файлаHTML, PDF
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